IDH08G65C6XKSA1 Infineon Technologies

Description: DIODE SIL CARB 650V 20A PGTO220, Current - Reverse Leakage @ Vr: 27 µA @ 420 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 401pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.