IDH10G120C5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIL CARB 1.2KV 10A TO220-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
auf Bestellung 2888 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.64 EUR |
| 50+ | 7.64 EUR |
| 100+ | 6.55 EUR |
| 500+ | 5.82 EUR |
| 1000+ | 4.99 EUR |
| 2000+ | 4.7 EUR |
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Technische Details IDH10G120C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 10A TO220-1, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 525pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 62 µA @ 1200 V.
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IDH10G120C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 165W; PG-TO220-2 Technology: CoolSiC™ 5G; SiC Power dissipation: 165W Case: PG-TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 10A Leakage current: 4µA Type of diode: Schottky rectifying Max. forward impulse current: 99A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDH10G120C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 165W; PG-TO220-2 Technology: CoolSiC™ 5G; SiC Power dissipation: 165W Case: PG-TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 10A Leakage current: 4µA Type of diode: Schottky rectifying Max. forward impulse current: 99A |
Produkt ist nicht verfügbar |