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IDH10G65C5ZXKSA1 Rochester Electronics, LLC

fundamentals-of-power-semiconductors
Hersteller: Rochester Electronics, LLC
Description: IDH10G65C5X - 650V SILICON CARBI
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Technische Details IDH10G65C5ZXKSA1 Rochester Electronics, LLC

Description: DIODE SIL CARB 650V 10A PGTO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 180 µA @ 650 V.

Weitere Produktangebote IDH10G65C5ZXKSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IDH10G65C5ZXKSA1 IDH10G65C5ZXKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SIL CARB 650V 10A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDH10G65C5ZXKSA1 fundamentals-of-power-semiconductors
IDH10G65C5ZXKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH