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IDH12S60CAKSA1

IDH12S60CAKSA1 Infineon Technologies

IDH12S60C.pdf
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 12A TO220-2
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 530pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Technische Details IDH12S60CAKSA1 Infineon Technologies

Description: DIODE SIL CARB 600V 12A TO220-2, Current - Reverse Leakage @ Vr: 160 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-2, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 530pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.