IDH16G65C5 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 129W; PG-TO220-2
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 129W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 16A
Semiconductor structure: single diode
Leakage current: 3.2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 105A
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 129W; PG-TO220-2
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 129W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 16A
Semiconductor structure: single diode
Leakage current: 3.2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 105A
Anzahl je Verpackung: 1 Stücke
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Technische Details IDH16G65C5 INFINEON TECHNOLOGIES
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 129W; PG-TO220-2, Case: PG-TO220-2, Mounting: THT, Kind of package: tube, Max. forward voltage: 1.8V, Power dissipation: 129W, Technology: CoolSiC™ 5G; SiC, Max. off-state voltage: 650V, Heatsink thickness: 1.17...137mm, Load current: 16A, Semiconductor structure: single diode, Leakage current: 3.2µA, Type of diode: Schottky rectifying, Max. forward impulse current: 105A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDH16G65C5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IDH16G65C5 | Hersteller : Infineon Technologies |
 Schottky Diodes & Rectifiers SIC DIODES |
Produkt ist nicht verfügbar |
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IDH16G65C5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 129W; PG-TO220-2 Case: PG-TO220-2 Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Power dissipation: 129W Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Load current: 16A Semiconductor structure: single diode Leakage current: 3.2µA Type of diode: Schottky rectifying Max. forward impulse current: 105A |
Produkt ist nicht verfügbar |