IDH20G120C5XKSA1 Infineon Technologies
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.4 EUR |
| 10+ | 6.53 EUR |
| 100+ | 6.12 EUR |
| 500+ | 5.97 EUR |
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Technische Details IDH20G120C5XKSA1 Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO2201, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1050pF @ 1V, 1MHz, Current - Average Rectified (Io): 56A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 123 µA @ 1200 V.
Weitere Produktangebote IDH20G120C5XKSA1 nach Preis ab 6.17 EUR bis 12.74 EUR
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IDH20G120C5XKSA1 | Hersteller : Infineon Technologies |
 Description: DIODE SIC 1.2KV 56A PGTO2201Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 123 µA @ 1200 V |
auf Bestellung 938 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDH20G120C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
IDH20G120C5XKSA1 THT Schottky diodes |
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