IDK04G65C5XTMA2 Infineon Technologies
auf Bestellung 787 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.38 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.40 EUR |
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Technische Details IDK04G65C5XTMA2 Infineon Technologies
Description: DIODE SIL CARB 650V 4A TO263-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PG-TO263-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 670 µA @ 650 V.
Weitere Produktangebote IDK04G65C5XTMA2 nach Preis ab 1.80 EUR bis 3.22 EUR
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IDK04G65C5XTMA2 | Hersteller : Infineon Technologies |
 Description: DIODE SIL CARB 650V 4A TO263-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 670 µA @ 650 V |
auf Bestellung 803 Stücke: Lieferzeit 10-14 Tag (e) |
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IDK04G65C5XTMA2 | Hersteller : Infineon Technologies |
Diode Schottky SiC 650V 4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IDK04G65C5XTMA2 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 4A TO263-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 670 µA @ 650 V |
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