IDK10G65C5XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIL CARB 650V 10A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 650 V
auf Bestellung 5718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 109+ | 4.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IDK10G65C5XTMA1 Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2632, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO263-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 1.7 mA @ 650 V.
Weitere Produktangebote IDK10G65C5XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IDK10G65C5XTMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IDK10G65C5XTMA1 - IDK10G65 - COOLSIC SCHOTTKY DIODE euEccn: TBC hazardous: true productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 5718 Stücke: Lieferzeit 14-21 Tag (e) |
||
 |
IDK10G65C5XTMA1 | Hersteller : Infineon Technologies |
Rectifier Diode Schottky 650V 10A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
|
|
IDK10G65C5XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 650V 10A PGTO2632 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 1.7 mA @ 650 V |
Produkt ist nicht verfügbar |