
IDK16G120C5XTMA1 Infineon Technologies

Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 13.09 EUR |
10+ | 8.89 EUR |
100+ | 6.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IDK16G120C5XTMA1 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 40A, Supplier Device Package: PG-TO263-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Weitere Produktangebote IDK16G120C5XTMA1 nach Preis ab 11.92 EUR bis 15.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDK16G120C5XTMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
IDK16G120C5XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
||||||||||||
![]() |
IDK16G120C5XTMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
Produkt ist nicht verfügbar |