IDK20G120C5XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIL CARB 1.2KV 56A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.19 EUR |
| 10+ | 13.87 EUR |
| 100+ | 11.56 EUR |
| 500+ | 10.2 EUR |
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Technische Details IDK20G120C5XTMA1 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 56A TO263-1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1050pF @ 1V, 1MHz, Current - Average Rectified (Io): 56A, Supplier Device Package: PG-TO263-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 123 µA @ 1200 V.
Weitere Produktangebote IDK20G120C5XTMA1 nach Preis ab 9.24 EUR bis 16.3 EUR
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IDK20G120C5XTMA1 | Hersteller : Infineon Technologies |
Schottky Diodes & Rectifiers SIC DISCRETE |
auf Bestellung 2820 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDK20G120C5XTMA1 | Hersteller : Infineon Technologies |
Rectifier Diode Schottky SiC 1.2KV 56A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IDK20G120C5XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; PG-TO263-2; 330W Technology: CoolSiC™ 5G; SiC Power dissipation: 330W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward impulse current: 168A Load current: 20A Max. forward voltage: 2V Leakage current: 44µA Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IDK20G120C5XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 1.2KV 56A TO263-1 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 123 µA @ 1200 V |
Produkt ist nicht verfügbar |
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| IDK20G120C5XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; PG-TO263-2; 330W Technology: CoolSiC™ 5G; SiC Power dissipation: 330W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward impulse current: 168A Load current: 20A Max. forward voltage: 2V Leakage current: 44µA |
Produkt ist nicht verfügbar |