Produkte > INFINEON TECHNOLOGIES > IDL04G65C5XUMA2
IDL04G65C5XUMA2

IDL04G65C5XUMA2 Infineon Technologies


Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.54 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details IDL04G65C5XUMA2 Infineon Technologies

Description: DIODE SIL CARBIDE 650V 4A VSON-4, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PG-VSON-4, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.

Weitere Produktangebote IDL04G65C5XUMA2 nach Preis ab 1.7 EUR bis 4.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IDL04G65C5XUMA2 IDL04G65C5XUMA2 Hersteller : Infineon Technologies Infineon_IDL04G65C5_DS_v02_00_en-3163542.pdf Schottky Diodes & Rectifiers SIC DIODES
auf Bestellung 2445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.89 EUR
10+ 3.24 EUR
100+ 2.59 EUR
500+ 2.2 EUR
1000+ 1.85 EUR
3000+ 1.75 EUR
6000+ 1.7 EUR
IDL04G65C5XUMA2 IDL04G65C5XUMA2 Hersteller : Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 3668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.93 EUR
10+ 4.42 EUR
100+ 3.56 EUR
500+ 2.92 EUR
1000+ 2.54 EUR
Mindestbestellmenge: 4