IDL08G65C5XUMA2 Infineon Technologies
auf Bestellung 9386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.98 EUR |
| 10+ | 4.73 EUR |
| 100+ | 4.08 EUR |
| 250+ | 4 EUR |
| 500+ | 3.63 EUR |
| 1000+ | 3.12 EUR |
| 3000+ | 2.9 EUR |
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Technische Details IDL08G65C5XUMA2 Infineon Technologies
Description: DIODE SIL CARBIDE 650V 8A VSON-4, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: PG-VSON-4, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 140 µA @ 650 V.
Weitere Produktangebote IDL08G65C5XUMA2 nach Preis ab 6.85 EUR bis 7.62 EUR
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IDL08G65C5XUMA2 | Hersteller : Infineon Technologies |
 Description: DIODE SIL CARBIDE 650V 8A VSON-4Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 140 µA @ 650 V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDL08G65C5XUMA2 | Hersteller : INFINEON TECHNOLOGIES |
IDL08G65C5 SMD Schottky diodes |
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IDL08G65C5XUMA2 | Hersteller : Infineon Technologies |
Rectifier Diode Schottky 650V 8A 4-Pin VSON EP T/R |
Produkt ist nicht verfügbar |
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IDL08G65C5XUMA2 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARBIDE 650V 8A VSON-4 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 140 µA @ 650 V |
Produkt ist nicht verfügbar |