IDP20C65D2XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE ARR GP 650V 10A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: PG-TO220-3-1
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 11+ | 1.66 EUR |
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Technische Details IDP20C65D2XKSA1 Infineon Technologies
Description: DIODE ARR GP 650V 10A TO220-3-1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 28 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: PG-TO220-3-1, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote IDP20C65D2XKSA1 nach Preis ab 0.68 EUR bis 2.62 EUR
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IDP20C65D2XKSA1 | Hersteller : Infineon Technologies |
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