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IDV03S60C

IDV03S60C Infineon Technologies

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Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-22
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-22
Current - Average Rectified (Io): 3A (DC)
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Bulk
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
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Technische Details IDV03S60C Infineon Technologies

Description: DIODE SIL CARB 600V 3A TO220-22, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-22, Current - Average Rectified (Io): 3A (DC), Capacitance @ Vr, F: 90pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Bulk, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.