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IDV30E60C

IDV30E60C Infineon Technologies

IDV30E60C.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 21A TO220-2FP
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2 Full Pack
Current - Average Rectified (Io): 21A
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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Technische Details IDV30E60C Infineon Technologies

Description: DIODE GP 600V 21A TO220-2FP, Current - Reverse Leakage @ Vr: 40 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2 Full Pack, Current - Average Rectified (Io): 21A, Technology: Standard, Reverse Recovery Time (trr): 130 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube.