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IDW20G65C5XKSA1

IDW20G65C5XKSA1 Infineon Technologies

IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
auf Bestellung 2439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.74 EUR
30+ 10.17 EUR
120+ 9.1 EUR
510+ 8.03 EUR
1020+ 7.22 EUR
2010+ 6.77 EUR
Mindestbestellmenge: 2
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Technische Details IDW20G65C5XKSA1 Infineon Technologies

Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 590pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 210 µA @ 650 V.

Weitere Produktangebote IDW20G65C5XKSA1 nach Preis ab 12.25 EUR bis 16.79 EUR

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Preis ohne MwSt
IDW20G65C5XKSA1 IDW20G65C5XKSA1 Hersteller : Infineon Technologies Infineon_IDW20G65C5_DS_v02_02_en-3163534.pdf Schottky Diodes & Rectifiers SIC DIODES
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16.79 EUR
10+ 15.17 EUR
25+ 14.77 EUR
100+ 12.55 EUR
240+ 12.25 EUR
IDW20G65C5XKSA1 IDW20G65C5XKSA1 Hersteller : Infineon Technologies 13030120628_idw20g65c5_final_datasheet.pdffolderiddb3a304314dca3890115.pdf Rectifier Diode Schottky 650V 20A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
IDW20G65C5XKSA1 IDW20G65C5XKSA1 Hersteller : INFINEON TECHNOLOGIES IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Max. off-state voltage: 650V
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IDW20G65C5XKSA1 IDW20G65C5XKSA1 Hersteller : INFINEON TECHNOLOGIES IDW20G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4aad88f21b5 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 87A
Leakage current: 4.1µA
Max. off-state voltage: 650V
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar