IDWD10G120C5XKSA1 Infineon Technologies
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.24 EUR |
| 10+ | 10.58 EUR |
| 100+ | 9.47 EUR |
| 240+ | 8.78 EUR |
| 480+ | 7.36 EUR |
| 1200+ | 7.02 EUR |
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Technische Details IDWD10G120C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 34A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 34A, Supplier Device Package: PG-TO247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Weitere Produktangebote IDWD10G120C5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IDWD10G120C5XKSA1 | Hersteller : Infineon Technologies |
 Rectifier Diode Schottky SiC 1.2KV 34A 2-Pin(2+Tab) TO-247 Tube |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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IDWD10G120C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 148W; TO247-2 Power dissipation: 148W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Case: TO247-2 Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 140A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDWD10G120C5XKSA1 | Hersteller : Infineon Technologies |
Description: DIODE SIL CARB 1.2KV 34A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-TO247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
Produkt ist nicht verfügbar |
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IDWD10G120C5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 148W; TO247-2 Power dissipation: 148W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Case: TO247-2 Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 140A |
Produkt ist nicht verfügbar |