IDWD10G120C5XKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 7.88 EUR |
| 10+ | 5.26 EUR |
| 100+ | 4.38 EUR |
| 480+ | 3.61 EUR |
| 1200+ | 3.43 EUR |
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Technische Details IDWD10G120C5XKSA1 Infineon Technologies
Description: DIODE SIC 1.2KV 34A PGTO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 730pF @ 1V, 1MHz, Current - Average Rectified (Io): 34A, Supplier Device Package: PG-TO247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A, Current - Reverse Leakage @ Vr: 80 µA @ 1200 V.
Weitere Produktangebote IDWD10G120C5XKSA1 nach Preis ab 4.91 EUR bis 8.68 EUR
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IDWD10G120C5XKSA1 | Infineon Technologies |
 Description: DIODE SIC 1.2KV 34A PGTO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 34A Supplier Device Package: PG-TO247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDWD10G120C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 34A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE SIC 1.2KV 34A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.68 EUR |
| 30+ | 4.91 EUR |