IDWD150G120C5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8485pF @ 1V, 100kHz
Current - Average Rectified (Io): 343A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.07 EUR |
| 30+ | 35.76 EUR |
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Technische Details IDWD150G120C5XKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 8485pF @ 1V, 100kHz, Current - Average Rectified (Io): 343A, Supplier Device Package: PG-TO247-2-U01, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A, Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV.
Weitere Produktangebote IDWD150G120C5XKSA1 nach Preis ab 43.33 EUR bis 57.04 EUR
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IDWD150G120C5XKSA1 | Hersteller : Infineon Technologies |
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