IDWD60G120C5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
CoolSiC 1200 V Schottky diode G5 with .XT interconnection technology
| Anzahl | Preis |
|---|---|
| 1+ | 27.88 EUR |
| 30+ | 18.39 EUR |
| 120+ | 16.44 EUR |
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Technische Details IDWD60G120C5XKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 3580pF @ 1V, 100kHz, Current - Average Rectified (Io): 153A, Supplier Device Package: PG-TO247-2-U01, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A, Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IDWD60G120C5XKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3580pF @ 1V, 100kHz Current - Average Rectified (Io): 153A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDWD60G120C5XKSA1 |
|
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH