IDWD60G120C5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesCoolSiC 1200 V Schottky diode G5 with .XT interconnection technology
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.88 EUR |
| 30+ | 18.39 EUR |
| 120+ | 16.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IDWD60G120C5XKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 3580pF @ 1V, 100kHz, Current - Average Rectified (Io): 153A, Supplier Device Package: PG-TO247-2-U01, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A, Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV.
Weitere Produktangebote IDWD60G120C5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IDWD60G120C5XKSA1 | Hersteller : Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3580pF @ 1V, 100kHz Current - Average Rectified (Io): 153A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV |
Produkt ist nicht verfügbar |