IDWD75G120C5XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
CoolSiC 1200 V Schottky diode G5 with .XT interconnection technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.79 EUR |
| 30+ | 26.87 EUR |
| 120+ | 24.91 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IDWD75G120C5XKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 4243pF @ 1V, 100kHz, Current - Average Rectified (Io): 186A, Supplier Device Package: PG-TO247-2-U01, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A, Current - Reverse Leakage @ Vr: 600 µA @ 1.2 kV.
Weitere Produktangebote IDWD75G120C5XKSA1 nach Preis ab 27.75 EUR bis 46.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IDWD75G120C5XKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 4243pF @ 1V, 100kHz Current - Average Rectified (Io): 186A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A Current - Reverse Leakage @ Vr: 600 µA @ 1.2 kV |
auf Bestellung 103 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDWD75G120C5XKSA1 |
|
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4243pF @ 1V, 100kHz
Current - Average Rectified (Io): 186A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 600 µA @ 1.2 kV
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4243pF @ 1V, 100kHz
Current - Average Rectified (Io): 186A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 75 A
Current - Reverse Leakage @ Vr: 600 µA @ 1.2 kV
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.77 EUR |
| 30+ | 29.77 EUR |
| 60+ | 27.75 EUR |