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IDY10S120XKSA1 Infineon Technologies

IDY10S120.pdf
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 5A PGTO247HC3
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247HC-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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Technische Details IDY10S120XKSA1 Infineon Technologies

Description: DIODE SIC 1.2KV 5A PGTO247HC3, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO247HC-3, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.