IFS100B12N3E4B31BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 200A 515W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 515 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V.