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IFS150B17N3E4PB11BPSA1

IFS150B17N3E4PB11BPSA1 Infineon Technologies


infineon-ifs150b17n3e4p_b11-ds-v03_00-cn.pdf Hersteller: Infineon Technologies
MIPAQ base Modul with Trench/Feild stopp IGBT4 and Ewithter Controlled Diode and Press FIT/bereits aufgetragenem ThermalInter face Material MIPAQ basemod
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Technische Details IFS150B17N3E4PB11BPSA1 Infineon Technologies

Description: IGBT MOD 1700V 300A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V.

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IFS150B17N3E4PB11BPSA1 Hersteller : Infineon Technologies Infineon-IFS150B17N3E4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94ae58b32e1a Description: IGBT MOD 1700V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Produkt ist nicht verfügbar