IGB01N120H2ATMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK; single transistor
Mounting: SMD
Gate charge: 8.6nC
Pulsed collector current: 3.5A
Type of transistor: IGBT
Turn-on time: 20.9ns
Kind of package: reel; tape
Semiconductor structure: single transistor
Case: D2PAK
Turn-off time: 493ns
Gate-emitter voltage: ±20V
Collector current: 1.3A
Collector-emitter voltage: 1.2kV
Power dissipation: 28W
Anzahl je Verpackung: 1000 Stücke
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Technische Details IGB01N120H2ATMA1 INFINEON TECHNOLOGIES
Category: SMD IGBT transistors, Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK; single transistor, Mounting: SMD, Gate charge: 8.6nC, Pulsed collector current: 3.5A, Type of transistor: IGBT, Turn-on time: 20.9ns, Kind of package: reel; tape, Semiconductor structure: single transistor, Case: D2PAK, Turn-off time: 493ns, Gate-emitter voltage: ±20V, Collector current: 1.3A, Collector-emitter voltage: 1.2kV, Power dissipation: 28W, Anzahl je Verpackung: 1000 Stücke.
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IGB01N120H2ATMA1 | Hersteller : Infineon Technologies |
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IGB01N120H2ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 1.3A; 28W; D2PAK; single transistor Mounting: SMD Gate charge: 8.6nC Pulsed collector current: 3.5A Type of transistor: IGBT Turn-on time: 20.9ns Kind of package: reel; tape Semiconductor structure: single transistor Case: D2PAK Turn-off time: 493ns Gate-emitter voltage: ±20V Collector current: 1.3A Collector-emitter voltage: 1.2kV Power dissipation: 28W |
Produkt ist nicht verfügbar |