IGB070S10S1XTMA1 Infineon Technologies
auf Bestellung 3390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.36 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 1.85 EUR |
| 2500+ | 1.76 EUR |
| 5000+ | 1.71 EUR |
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Technische Details IGB070S10S1XTMA1 Infineon Technologies
Description: MV GAN DISCRETES, Packaging: Tube, Package / Case: 4-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 8mA, Supplier Device Package: PG-TSON-4-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V.
Weitere Produktangebote IGB070S10S1XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IGB070S10S1XTMA1 | Hersteller : Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tube Package / Case: 4-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 8mA Supplier Device Package: PG-TSON-4-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
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