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IGB110S10S1XTMA1

IGB110S10S1XTMA1 Infineon Technologies

Infineon_IGB110S10S1_DataSheet_v01_00_EN-3572917.pdf Hersteller: Infineon Technologies
GaN FETs CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
auf Bestellung 3214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.96 EUR
10+2.24 EUR
100+1.74 EUR
500+1.49 EUR
1000+1.27 EUR
5000+1.26 EUR
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Technische Details IGB110S10S1XTMA1 Infineon Technologies

Description: MV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V, Power Dissipation (Max): 2.5W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: PG-TSON-4-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V.

Weitere Produktangebote IGB110S10S1XTMA1

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IGB110S10S1XTMA1 IGB110S10S1XTMA1 Hersteller : INFINEON Infineon-IGB110S10S1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa599e49d6f71 Description: INFINEON - IGB110S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 23 A, 0.011 ohm, 3.4 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 3.4nC
Bauform - Transistor: TSON
Anzahl der Pins: 4Pin(s)
Produktpalette: CoolGaN Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.011ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IGB110S10S1XTMA1 IGB110S10S1XTMA1 Hersteller : INFINEON Infineon-IGB110S10S1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa599e49d6f71 Description: INFINEON - IGB110S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 23 A, 0.011 ohm, 3.4 nC, TSON, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
auf Bestellung 4990 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IGB110S10S1XTMA1 Hersteller : Infineon Technologies Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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