
IGB110S10S1XTMA1 Infineon Technologies
auf Bestellung 3214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 2.96 EUR |
10+ | 2.24 EUR |
100+ | 1.74 EUR |
500+ | 1.49 EUR |
1000+ | 1.27 EUR |
5000+ | 1.26 EUR |
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Technische Details IGB110S10S1XTMA1 Infineon Technologies
Description: MV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V, Power Dissipation (Max): 2.5W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: PG-TSON-4-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V.
Weitere Produktangebote IGB110S10S1XTMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IGB110S10S1XTMA1 | Hersteller : INFINEON |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 23A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 3.4nC Bauform - Transistor: TSON Anzahl der Pins: 4Pin(s) Produktpalette: CoolGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4990 Stücke: Lieferzeit 14-21 Tag (e) |
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IGB110S10S1XTMA1 | Hersteller : INFINEON |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 |
auf Bestellung 4990 Stücke: Lieferzeit 14-21 Tag (e) |
|
IGB110S10S1XTMA1 | Hersteller : Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tape & Reel (TR) Package / Case: 4-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V Power Dissipation (Max): 2.5W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: PG-TSON-4-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V |
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