IGB110S10S1XTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.54 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.17 EUR |
| 5000+ | 1.05 EUR |
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Technische Details IGB110S10S1XTMA1 Infineon Technologies
Description: MV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V, Power Dissipation (Max): 2.5W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: PG-TSON-4-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V.
Weitere Produktangebote IGB110S10S1XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IGB110S10S1XTMA1 | Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tape & Reel (TR) Package / Case: 4-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V Power Dissipation (Max): 2.5W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: PG-TSON-4-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IGB110S10S1XTMA1 |
Hersteller: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH