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IGB30N60T

IGB30N60T Infineon Technologies

Infineon_IGB30N60T_DataSheet_v02_05_EN-3361639.pdf Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS IGBT TECH 600V 30A
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Technische Details IGB30N60T Infineon Technologies

Description: IGB30N60 - DISCRETE IGBT WITHOUT, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A, Supplier Device Package: PG-TO263-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/254ns, Switching Energy: 690µJ (on), 770µJ (off), Test Condition: 400V, 30A, 10.6Ohm, 15V, Gate Charge: 167 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 187 W.

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IGB30N60T IGB30N60T Hersteller : Infineon Technologies INFN-S-A0001299339-1.pdf?t.download=true&u=5oefqw Description: IGB30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
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