IGB30N60TATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 3.49 EUR |
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Technische Details IGB30N60TATMA1 Infineon Technologies
Description: IGBT TRENCH 600V 60A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A, Supplier Device Package: PG-TO263-3-2, IGBT Type: Trench, Td (on/off) @ 25°C: 23ns/254ns, Switching Energy: 1.46mJ, Test Condition: 400V, 30A, 10.6Ohm, 15V, Gate Charge: 167 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 187 W.
Weitere Produktangebote IGB30N60TATMA1 nach Preis ab 4.08 EUR bis 6.76 EUR
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IGB30N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 600V 60A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Td (on/off) @ 25°C: 23ns/254ns Switching Energy: 1.46mJ Test Condition: 400V, 30A, 10.6Ohm, 15V Gate Charge: 167 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 187 W |
auf Bestellung 1970 Stücke: Lieferzeit 21-28 Tag (e) |
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IGB30N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 45A 187000mW 3-Pin(2+Tab) D2PAK T/R |
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IGB30N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 39A Power dissipation: 187W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Turn-on time: 44ns Turn-off time: 0.3µs Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| IGB30N60TATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
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IGB30N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 39A Power dissipation: 187W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: SMD Gate charge: 167nC Kind of package: reel; tape Turn-on time: 44ns Turn-off time: 0.3µs |
Produkt ist nicht verfügbar |