IGB50N65S5ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/139ns
Switching Energy: 1.23mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 8.2Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 270 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.88 EUR |
| 2000+ | 2.71 EUR |
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Technische Details IGB50N65S5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/139ns, Switching Energy: 1.23mJ (on), 740µJ (off), Test Condition: 400V, 50A, 8.2Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 270 W.
Weitere Produktangebote IGB50N65S5ATMA1 nach Preis ab 2.85 EUR bis 5.56 EUR
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IGB50N65S5ATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
auf Bestellung 1983 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65S5ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/139ns Switching Energy: 1.23mJ (on), 740µJ (off) Test Condition: 400V, 50A, 8.2Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 270 W |
auf Bestellung 3437 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB50N65S5ATMA1 | Hersteller : Infineon Technologies |
5 high speed soft switching IGBT |
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IGB50N65S5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 63A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 50ns Turn-off time: 199ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IGB50N65S5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 63A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 50ns Turn-off time: 199ns |
Produkt ist nicht verfügbar |