IGC019S06S1XTMA1 Infineon Technologies
auf Bestellung 395000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 3.23 EUR |
| 200000+ | 2.86 EUR |
| 300000+ | 2.58 EUR |
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Technische Details IGC019S06S1XTMA1 Infineon Technologies
Description: MV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 6-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 12mA, Supplier Device Package: PG-TSON-6-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V.
Weitere Produktangebote IGC019S06S1XTMA1 nach Preis ab 2.36 EUR bis 6.64 EUR
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IGC019S06S1XTMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC019S06S1XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC019S06S1XTMA1 | Hersteller : Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Cut Tape (CT) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 12mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V |
auf Bestellung 3251 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC019S06S1XTMA1 | Hersteller : Infineon Technologies |
GaN FETs CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm |
auf Bestellung 3298 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC019S06S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC019S06S1XTMA1 - Galliumnitrid (GaN)-Transistor, 60 V, 99 A, 1900 µohm, 13 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 99A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 13nC Bauform - Transistor: TSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 1900µohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 3494 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC019S06S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC019S06S1XTMA1 - Galliumnitrid (GaN)-Transistor, 60 V, 99 A, 1900 µohm, 13 nC, TSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 99A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 13nC Anzahl der Pins: 6Pin(s) productTraceability: No Drain-Source-Durchgangswiderstand: 1900µohm |
auf Bestellung 3494 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC019S06S1XTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R |
Produkt ist nicht verfügbar |
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IGC019S06S1XTMA1 | Hersteller : Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tape & Reel (TR) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 12mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V |
Produkt ist nicht verfügbar |