IGC019S06S1XTMA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IGC019S06S1XTMA1 - Galliumnitrid (GaN)-Transistor, 60 V, 99 A, 1900 µohm, 13 nC, TSON, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 99A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 13nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 6Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 1900µohm
| Anzahl | Privatkunde |
|---|---|
| 100+ | 4.02 EUR |
| 500+ | 3.43 EUR |
| 1000+ | 3.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGC019S06S1XTMA1 INFINEON
Description: GANFET N-CH 60V 27A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 12mA, Supplier Device Package: PG-TSON-6-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V.
Weitere Produktangebote IGC019S06S1XTMA1 nach Preis ab 2.81 EUR bis 10.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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IGC019S06S1XTMA1 | Infineon Technologies |
GaN FETs CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm |
auf Bestellung 2348 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC019S06S1XTMA1 | Infineon Technologies |
Description: GANFET N-CH 60V 27A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 12mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V |
auf Bestellung 2229 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC019S06S1XTMA1 | INFINEON |
Description: INFINEON - IGC019S06S1XTMA1 - Galliumnitrid (GaN)-Transistor, 60 V, 99 A, 1900 µohm, 13 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 99A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 13nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 1900µohm |
auf Bestellung 5446 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC019S06S1XTMA1 | Infineon Technologies |
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IGC019S06S1XTMA1 | Infineon Technologies |
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IGC019S06S1XTMA1 |
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Hersteller: Infineon Technologies
GaN FETs CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
GaN FETs CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm
auf Bestellung 2348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.29 EUR |
| 10+ | 5.46 EUR |
| 100+ | 3.86 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 3.28 EUR |
| 2500+ | 3.08 EUR |
| 5000+ | 2.81 EUR |
| IGC019S06S1XTMA1 |
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Hersteller: Infineon Technologies
Description: GANFET N-CH 60V 27A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
Description: GANFET N-CH 60V 27A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
auf Bestellung 2229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.43 EUR |
| 10+ | 5.55 EUR |
| 50+ | 4.32 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.34 EUR |
| IGC019S06S1XTMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGC019S06S1XTMA1 - Galliumnitrid (GaN)-Transistor, 60 V, 99 A, 1900 µohm, 13 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 99A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 13nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 1900µohm
Description: INFINEON - IGC019S06S1XTMA1 - Galliumnitrid (GaN)-Transistor, 60 V, 99 A, 1900 µohm, 13 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 99A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 13nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 1900µohm
auf Bestellung 5446 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 10.09 EUR |
| 40+ | 5.91 EUR |
| 100+ | 4.02 EUR |
| 500+ | 3.43 EUR |
| 1000+ | 3.37 EUR |
| IGC019S06S1XTMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| IGC019S06S1XTMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R
Trans MOSFET N-CH GaN 60V 27A 6-Pin TSON T/R
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)