IGC025S08S1XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
auf Bestellung 4349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.44 EUR |
| 10+ | 4.25 EUR |
| 100+ | 3 EUR |
| 500+ | 2.74 EUR |
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Technische Details IGC025S08S1XTMA1 Infineon Technologies
Description: MV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 6-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 10mA, Supplier Device Package: PG-TSON-6-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V.
Weitere Produktangebote IGC025S08S1XTMA1 nach Preis ab 2.36 EUR bis 6.64 EUR
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IGC025S08S1XTMA1 | Hersteller : Infineon Technologies |
GaN FETs CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm |
auf Bestellung 1272 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC025S08S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC025S08S1XTMA1 - Galliumnitrid (GaN)-Transistor, 80 V, 86 A, 0.0025 ohm, 12 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 86A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 12nC Bauform - Transistor: TSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4930 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC025S08S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC025S08S1XTMA1 - Galliumnitrid (GaN)-Transistor, 80 V, 86 A, 0.0025 ohm, 12 nC, TSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 86A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 12nC Anzahl der Pins: 6Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0025ohm |
auf Bestellung 4930 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC025S08S1XTMA1 | Hersteller : Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tape & Reel (TR) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 10mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V |
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