IGC033S101XTMA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IGC033S101XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, VSON, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 11nC
Anzahl der Pins: 6Pin(s)
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 3300µohm
SVHC: No SVHC (25-Jun-2025)
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Technische Details IGC033S101XTMA1 INFINEON
Description: MV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 8mA, Supplier Device Package: PG-VSON-6-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V.
Weitere Produktangebote IGC033S101XTMA1 nach Preis ab 2.81 EUR bis 10.34 EUR
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IGC033S101XTMA1 | Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 8mA Supplier Device Package: PG-VSON-6-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
auf Bestellung 4430 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC033S101XTMA1 | Infineon Technologies |
GaN FETs MV GAN DISCRETES |
auf Bestellung 3218 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC033S101XTMA1 | INFINEON |
Description: INFINEON - IGC033S101XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, VSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 76A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 11nC Bauform - Transistor: VSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN G3 Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 3300µohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1464 Stücke: Lieferzeit 14-21 Tag (e) |
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| IGC033S101XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 76A; 45W |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IGC033S101XTMA1 |
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Hersteller: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 4430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.72 EUR |
| 10+ | 5.09 EUR |
| 100+ | 3.59 EUR |
| 500+ | 3.28 EUR |
| IGC033S101XTMA1 |
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Hersteller: Infineon Technologies
GaN FETs MV GAN DISCRETES
GaN FETs MV GAN DISCRETES
auf Bestellung 3218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.29 EUR |
| 10+ | 5.46 EUR |
| 100+ | 3.86 EUR |
| 500+ | 3.28 EUR |
| 2500+ | 3.17 EUR |
| 5000+ | 2.81 EUR |
| IGC033S101XTMA1 |
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Hersteller: INFINEON
Description: INFINEON - IGC033S101XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, VSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 11nC
Bauform - Transistor: VSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN G3 Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 3300µohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IGC033S101XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, VSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 11nC
Bauform - Transistor: VSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN G3 Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 3300µohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 1464 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 10.34 EUR |
| 36+ | 6.54 EUR |
| 100+ | 4.77 EUR |
| 500+ | 4.07 EUR |
| 1000+ | 3.72 EUR |
| IGC033S101XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 76A; 45W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 76A; 45W
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 2.92 EUR |