auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.42 EUR |
| 10+ | 4.38 EUR |
| 100+ | 3.47 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.82 EUR |
| 5000+ | 2.38 EUR |
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Technische Details IGC033S10S1XTMA1 Infineon Technologies
Description: MV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 6-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 8mA, Supplier Device Package: PG-TSON-6-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V.
Weitere Produktangebote IGC033S10S1XTMA1 nach Preis ab 2.76 EUR bis 6.49 EUR
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IGC033S10S1XTMA1 | Hersteller : Infineon Technologies |
 Description: MV GAN DISCRETESPackaging: Cut Tape (CT) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 8mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
auf Bestellung 2517 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC033S10S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 76A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 11nC Bauform - Transistor: TSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN G3 Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 3300µohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 318 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC033S10S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Gate-Ladung, typ.: 11nC rohsCompliant: YES Anzahl der Pins: 6Pin(s) euEccn: NLR hazardous: false Drain-Source-Spannung Vds: 100V Drain-Source-Durchgangswiderstand: 3300µohm rohsPhthalatesCompliant: YES Dauer-Drainstrom Id: 76A usEccn: EAR99 SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 318 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC033S10S1XTMA1 | Hersteller : Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tape & Reel (TR) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 8mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
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