IGC033S10S1XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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Technische Details IGC033S10S1XTMA1 Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 8mA, Supplier Device Package: PG-TSON-6-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V.
Weitere Produktangebote IGC033S10S1XTMA1 nach Preis ab 3.34 EUR bis 9.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IGC033S10S1XTMA1 | INFINEON |
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 76A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Ladung, typ.: 11nC SVHC: No SVHC (25-Jun-2025) Anzahl der Pins: 6Pin(s) productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 3300µohm |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC033S10S1XTMA1 | Infineon Technologies |
Description: GANFET N-CH 100V 21A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 8mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
auf Bestellung 5315 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC033S10S1XTMA1 | INFINEON |
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 76A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 11nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN G3 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 3300µohm |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC033S10S1XTMA1 | Infineon Technologies |
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IGC033S10S1XTMA1 | Infineon Technologies |
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IGC033S10S1XTMA1 |
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Hersteller: INFINEON
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 11nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 6Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3300µohm
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 11nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 6Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3300µohm
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 4.02 EUR |
| IGC033S10S1XTMA1 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 5315 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.43 EUR |
| 10+ | 5.55 EUR |
| 50+ | 4.32 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.34 EUR |
| IGC033S10S1XTMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 11nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN G3 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3300µohm
Description: INFINEON - IGC033S10S1XTMA1 - Galliumnitrid (GaN)-Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 11nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN G3 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3300µohm
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 9.97 EUR |
| 40+ | 5.91 EUR |
| 100+ | 4.02 EUR |
| IGC033S10S1XTMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| IGC033S10S1XTMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)