IGC037S12S1XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
auf Bestellung 3220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.49 EUR |
| 10+ | 4.28 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.76 EUR |
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Technische Details IGC037S12S1XTMA1 Infineon Technologies
Description: MV GAN DISCRETES, Packaging: Cut Tape (CT), Package / Case: 6-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 7mA, Supplier Device Package: PG-TSON-6-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +5.5V, -4V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V.
Weitere Produktangebote IGC037S12S1XTMA1 nach Preis ab 2.36 EUR bis 6.64 EUR
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IGC037S12S1XTMA1 | Hersteller : Infineon Technologies |
GaN FETs CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm |
auf Bestellung 9321 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC037S12S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 0.0037 ohm, 10 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 71A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 10nC Bauform - Transistor: TSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0037ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4980 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC037S12S1XTMA1 | Hersteller : INFINEON |
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 0.0037 ohm, 10 nC, TSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 71A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 10nC Anzahl der Pins: 6Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0037ohm |
auf Bestellung 4980 Stücke: Lieferzeit 14-21 Tag (e) |
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IGC037S12S1XTMA1 | Hersteller : Infineon Technologies |
Description: MV GAN DISCRETES Packaging: Tube Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 7mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.5V, -4V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V |
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