IGC037S12S1XTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.88 EUR |
| 10+ | 4.45 EUR |
| 100+ | 3.24 EUR |
| 500+ | 2.76 EUR |
| 2500+ | 2.59 EUR |
| 5000+ | 2.36 EUR |
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Technische Details IGC037S12S1XTMA1 Infineon Technologies
Description: GANFET N-CH 120V 19A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V, Power Dissipation (Max): 3.3W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 7mA, Supplier Device Package: PG-TSON-6-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±6.5V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V.
Weitere Produktangebote IGC037S12S1XTMA1 nach Preis ab 2.88 EUR bis 8.1 EUR
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IGC037S12S1XTMA1 | Infineon Technologies |
 Description: GANFET N-CH 120V 19A 6TDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 7mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V |
auf Bestellung 1782 Stücke: Lieferzeit 10-14 Tag (e) |
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IGC037S12S1XTMA1 | INFINEON |
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 3700 µohm, 10 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 71A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 10nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSON Anzahl der Pins: 6Pin(s) Produktpalette: CoolGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 3700µohm |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IGC037S12S1XTMA1 | INFINEON |
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 3700 µohm, 10 nC, TSON, Oberflächenmontage tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 71A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Ladung, typ.: 10nC SVHC: No SVHC (25-Jun-2025) Anzahl der Pins: 6Pin(s) productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 3700µohm |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IGC037S12S1XTMA1 |
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Hersteller: Infineon Technologies
Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
auf Bestellung 1782 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.1 EUR |
| 10+ | 5.34 EUR |
| 100+ | 3.77 EUR |
| 500+ | 3.1 EUR |
| 1000+ | 2.88 EUR |
| IGC037S12S1XTMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 3700 µohm, 10 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 71A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 10nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3700µohm
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 3700 µohm, 10 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 71A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 10nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 6Pin(s)
Produktpalette: CoolGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3700µohm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)
| IGC037S12S1XTMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 3700 µohm, 10 nC, TSON, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 71A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 10nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 6Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3700µohm
Description: INFINEON - IGC037S12S1XTMA1 - Galliumnitrid (GaN)-Transistor, 120 V, 71 A, 3700 µohm, 10 nC, TSON, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 71A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 10nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 6Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 3700µohm
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)