IGD70R270D2SAUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 0.97 EUR |
| 2500+ | 0.87 EUR |
| 5000+ | 0.84 EUR |
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Technische Details IGD70R270D2SAUMA1 Infineon Technologies
Description: INFINEON - IGD70R270D2SAUMA1 - Galliumnitrid (GaN)-Transistor, 700 V, 5.8 A, 0.33 ohm, 1 nC, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 700V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.8A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: -, isCanonical: Y, usEccn: EAR99, euEccn: NLR, Gate-Ladung, typ.: 1nC, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: CoolGaN G5 Series, productTraceability: No, Drain-Source-Durchgangswiderstand: 0.33ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote IGD70R270D2SAUMA1 nach Preis ab 1.02 EUR bis 3.24 EUR
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IGD70R270D2SAUMA1 | Hersteller : Infineon Technologies |
 Description: GANFET N-CH 700V 5.8A T0252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 560µA Supplier Device Package: PG-TO252-3-U03 Vgs (Max): -10V Drain to Source Voltage (Vdss): 700 V Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V |
auf Bestellung 2201 Stücke: Lieferzeit 10-14 Tag (e) |
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IGD70R270D2SAUMA1 | Hersteller : INFINEON |
Description: INFINEON - IGD70R270D2SAUMA1 - Galliumnitrid (GaN)-Transistor, 700 V, 5.8 A, 0.33 ohm, 1 nC, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 5.8A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 1nC Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: CoolGaN G5 Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.33ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2394 Stücke: Lieferzeit 14-21 Tag (e) |
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IGD70R270D2SAUMA1 | Hersteller : Infineon Technologies |
Description: GANFET N-CH 700V 5.8A T0252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 560µA Supplier Device Package: PG-TO252-3-U03 Vgs (Max): -10V Drain to Source Voltage (Vdss): 700 V Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V |
Produkt ist nicht verfügbar |