IGI60L2727B1MXUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Gate Drivers 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
| Anzahl | Preis |
|---|---|
| 1+ | 7.02 EUR |
| 10+ | 5.35 EUR |
| 25+ | 4.93 EUR |
| 100+ | 4.47 EUR |
| 250+ | 4.24 EUR |
| 500+ | 4.12 EUR |
| 1000+ | 4 EUR |
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Technische Details IGI60L2727B1MXUMA1 Infineon Technologies
Gate Drivers 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode.