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IGK120B041SXTSA1

IGK120B041SXTSA1 Infineon Technologies

infineon-igk120b041s-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
27+0.67 EUR
30+0.6 EUR
100+0.53 EUR
250+0.49 EUR
500+0.47 EUR
1000+0.45 EUR
Mindestbestellmenge: 19
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Technische Details IGK120B041SXTSA1 Infineon Technologies

Description: GANFET N-CH 40V 30A 16WLBGA, Packaging: Tape & Reel (TR), Package / Case: 16-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V, Power Dissipation (Max): 1.2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: SG-UFWLB-16-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V.

Weitere Produktangebote IGK120B041SXTSA1 nach Preis ab 0.45 EUR bis 2.09 EUR

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IGK120B041SXTSA1 IGK120B041SXTSA1 Hersteller : Infineon Technologies infineon_igk120b041s_datasheet_en.pdf GaN FETs CoolGaN Bidirectional Switch
auf Bestellung 3998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.09 EUR
10+1.3 EUR
100+0.85 EUR
500+0.67 EUR
1000+0.57 EUR
2500+0.52 EUR
5000+0.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGK120B041SXTSA1 IGK120B041SXTSA1 Hersteller : Infineon Technologies infineon-igk120b041s-datasheet-en.pdf Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
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Im Einkaufswagen  Stück im Wert von  UAH