IGL65R055D2XUMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.7 EUR |
| 10+ | 8.57 EUR |
| 100+ | 6.2 EUR |
| 500+ | 5.87 EUR |
| 1000+ | 5.09 EUR |
| 3000+ | 4.96 EUR |
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Technische Details IGL65R055D2XUMA1 Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN, Packaging: Tape & Reel (TR), Package / Case: 8-TDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-TSON-8-U06, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V.
Weitere Produktangebote IGL65R055D2XUMA1 nach Preis ab 5.95 EUR bis 12.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IGL65R055D2XUMA1 | Infineon Technologies |
 Description: GANFET N-CH 650V 22A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
auf Bestellung 1104 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGL65R055D2XUMA1 |
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Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
auf Bestellung 1104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.95 EUR |
| 10+ | 8.71 EUR |
| 100+ | 6.32 EUR |
| 500+ | 5.95 EUR |