IGL65R080D2XUMA1 Infineon Technologies
auf Bestellung 2092 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.76 EUR |
| 10+ | 5.56 EUR |
| 100+ | 4 EUR |
| 500+ | 3.87 EUR |
| 3000+ | 3.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGL65R080D2XUMA1 Infineon Technologies
Description: IGL65R080D2XUMA1, Packaging: Tape & Reel (TR), Package / Case: 8-TDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Power Dissipation (Max): 81W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1.8mA, Supplier Device Package: PG-TSON-8-U06, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V.
Weitere Produktangebote IGL65R080D2XUMA1 nach Preis ab 3.86 EUR bis 8.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IGL65R080D2XUMA1 | Hersteller : Infineon Technologies |
 Description: IGL65R080D2XUMA1Packaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V |
auf Bestellung 2884 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
IGL65R080D2XUMA1 | Hersteller : Infineon Technologies |
Description: IGL65R080D2XUMA1 Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V |
Produkt ist nicht verfügbar |