IGL65R080D2XUMA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IGL65R080D2XUMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 18 A, 0.1 ohm, 3.3 nC, TSON, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
SVHC: No SVHC (25-Jun-2025)
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
| Anzahl | Privatkunde |
|---|---|
| 100+ | 5.2 EUR |
| 500+ | 4.71 EUR |
| 1000+ | 4.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGL65R080D2XUMA1 INFINEON
Description: INFINEON - IGL65R080D2XUMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 18 A, 0.1 ohm, 3.3 nC, TSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 18A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Ladung, typ.: 3.3nC, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TSON, Anzahl der Pins: 8Pin(s), Produktpalette: CoolGaN G5 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Drain-Source-Durchgangswiderstand: 0.1ohm.
Weitere Produktangebote IGL65R080D2XUMA1 nach Preis ab 3.92 EUR bis 12.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IGL65R080D2XUMA1 | Infineon Technologies |
GaN FETs CoolGaN Transistor 650 V G5 |
auf Bestellung 2787 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
IGL65R080D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 18A 8TDFN Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-TSON-8-U06 Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Power Dissipation (Max): 81W (Tc) Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-TDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2864 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
IGL65R080D2XUMA1 | INFINEON |
Description: INFINEON - IGL65R080D2XUMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 18 A, 0.1 ohm, 3.3 nC, TSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 3.3nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSON Anzahl der Pins: 8Pin(s) Produktpalette: CoolGaN G5 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.1ohm |
auf Bestellung 1931 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IGL65R080D2XUMA1 |
|
Hersteller: Infineon Technologies
GaN FETs CoolGaN Transistor 650 V G5
GaN FETs CoolGaN Transistor 650 V G5
auf Bestellung 2787 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.61 EUR |
| 10+ | 7.1 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.61 EUR |
| 1000+ | 4.44 EUR |
| 3000+ | 3.92 EUR |
| IGL65R080D2XUMA1 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.83 EUR |
| 10+ | 7.22 EUR |
| 100+ | 5.18 EUR |
| 500+ | 4.69 EUR |
| IGL65R080D2XUMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGL65R080D2XUMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 18 A, 0.1 ohm, 3.3 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 3.3nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 8Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.1ohm
Description: INFINEON - IGL65R080D2XUMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 18 A, 0.1 ohm, 3.3 nC, TSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 18A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 3.3nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSON
Anzahl der Pins: 8Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.1ohm
auf Bestellung 1931 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 12.67 EUR |
| 30+ | 7.87 EUR |
| 100+ | 5.2 EUR |
| 500+ | 4.71 EUR |
| 1000+ | 4.55 EUR |