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IGL65R140D2XUMA1

IGL65R140D2XUMA1 Infineon Technologies

448_IGL65R140D2.pdf Hersteller: Infineon Technologies
Description: IGL65R140D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.63 EUR
10+3.69 EUR
100+2.58 EUR
500+2.28 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IGL65R140D2XUMA1 Infineon Technologies

Description: IGL65R140D2XUMA1, Packaging: Tape & Reel (TR), Package / Case: 8-TDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: PG-TSON-8-U06, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V.

Weitere Produktangebote IGL65R140D2XUMA1 nach Preis ab 1.94 EUR bis 5.65 EUR

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IGL65R140D2XUMA1 IGL65R140D2XUMA1 Hersteller : Infineon Technologies Infineon_06-19-2025_DS_IGL65R140D2_1_0.pdf GaN FETs CoolGaN Transistor 650 V G5
auf Bestellung 2050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.65 EUR
10+3.7 EUR
100+2.59 EUR
500+2.29 EUR
3000+1.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGL65R140D2XUMA1 IGL65R140D2XUMA1 Hersteller : Infineon Technologies 448_IGL65R140D2.pdf Description: IGL65R140D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH