| Anzahl | Preis |
|---|---|
| 1+ | 9.72 EUR |
| 10+ | 7.27 EUR |
| 25+ | 6.51 EUR |
| 100+ | 5.74 EUR |
| 250+ | 5.51 EUR |
| 500+ | 5.16 EUR |
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Technische Details IGLD60R190D1AUMA3 Infineon Technologies
Description: GAN HV, Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V, Part Status: Active, Supplier Device Package: PG-LSON-8-1, Vgs(th) (Max) @ Id: 1.6V @ 960µA, Power Dissipation (Max): 62.5W (Tc), Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-LDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote IGLD60R190D1AUMA3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IGLD60R190D1AUMA3 | Infineon Technologies |
 Description: GAN HVInput Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V Part Status: Active Supplier Device Package: PG-LSON-8-1 Vgs(th) (Max) @ Id: 1.6V @ 960µA Power Dissipation (Max): 62.5W (Tc) Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-LDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
IGLD60R190D1AUMA3 | Infineon Technologies |
Description: GAN HV Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V Part Status: Active Supplier Device Package: PG-LSON-8-1 Vgs(th) (Max) @ Id: 1.6V @ 960µA Power Dissipation (Max): 62.5W (Tc) Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-LDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IGLD60R190D1AUMA3 |
|
Hersteller: Infineon Technologies
Description: GAN HV
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-LSON-8-1
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-LDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: GAN HV
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-LSON-8-1
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-LDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGLD60R190D1AUMA3 |
|
Hersteller: Infineon Technologies
Description: GAN HV
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-LSON-8-1
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-LDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: GAN HV
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-LSON-8-1
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Power Dissipation (Max): 62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-LDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH