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IGLD65R055D2AUMA1 Infineon Technologies


infineon-igld65r055d2-datasheet-v01_00-en.pdf Hersteller: Infineon Technologies
Cool GaN Enhancement-mode Power Transistor
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Technische Details IGLD65R055D2AUMA1 Infineon Technologies

Description: GANFET N-CH, Packaging: Tape & Reel (TR), Package / Case: 8-LDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-LSON-8-1, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V.

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IGLD65R055D2AUMA1 IGLD65R055D2AUMA1 Hersteller : Infineon Technologies Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803 Description: GANFET N-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Produkt ist nicht verfügbar
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IGLD65R055D2AUMA1 IGLD65R055D2AUMA1 Hersteller : Infineon Technologies Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803 Description: GANFET N-CH
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH