IGLR60R340D1XUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 530µA
Supplier Device Package: PG-TSON-8-7
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 87.7 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 3+ | 8.15 EUR |
| 10+ | 5.43 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.23 EUR |
| 1000+ | 3.06 EUR |
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Technische Details IGLR60R340D1XUMA1 Infineon Technologies
Description: GAN HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc), Power Dissipation (Max): 41.6W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 530µA, Supplier Device Package: PG-TSON-8-7, Part Status: Active, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 87.7 pF @ 400 V.
Weitere Produktangebote IGLR60R340D1XUMA1 nach Preis ab 3.52 EUR bis 9.24 EUR
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IGLR60R340D1XUMA1 | Infineon Technologies |
MOSFETs HV GAN DISCRETES |
auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGLR60R340D1XUMA1 |
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Hersteller: Infineon Technologies
MOSFETs HV GAN DISCRETES
MOSFETs HV GAN DISCRETES
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.24 EUR |
| 10+ | 6.05 EUR |
| 100+ | 4.47 EUR |
| 500+ | 3.96 EUR |
| 1000+ | 3.75 EUR |
| 5000+ | 3.52 EUR |