IGLR65R200D2XUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 5000+ | 1.2 EUR |
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Technische Details IGLR65R200D2XUMA1 Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 710µA, Supplier Device Package: PG-TSON-8-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V.
Weitere Produktangebote IGLR65R200D2XUMA1 nach Preis ab 1.24 EUR bis 4.29 EUR
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IGLR65R200D2XUMA1 | Hersteller : Infineon Technologies |
GaN FETs HV GAN DISCRETES |
auf Bestellung 4912 Stücke: Lieferzeit 10-14 Tag (e) |
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IGLR65R200D2XUMA1 | Hersteller : Infineon Technologies |
Description: GANFET N-CH 650V 9.2A 8TDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 710µA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V |
auf Bestellung 6632 Stücke: Lieferzeit 10-14 Tag (e) |
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