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IGLR65R270D2XUMA1

IGLR65R270D2XUMA1 Infineon Technologies

Infineon-IGLR65R270D2-DataSheet-v01_00-EN.pdf Hersteller: Infineon Technologies
GaN FETs HV GAN DISCRETES
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Lieferzeit 10-14 Tag (e)
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1+3.59 EUR
10+2.31 EUR
100+1.57 EUR
500+1.3 EUR
1000+1.21 EUR
5000+1.02 EUR
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Technische Details IGLR65R270D2XUMA1 Infineon Technologies

Description: GANFET N-CH 650V 7.2A 8TDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 560µA, Supplier Device Package: PG-TSON-8-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V.

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IGLR65R270D2XUMA1 IGLR65R270D2XUMA1 Hersteller : Infineon Technologies IGLR65R270D2XUMA1.pdf Description: GANFET N-CH 650V 7.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
auf Bestellung 4674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.49 EUR
100+1.7 EUR
500+1.36 EUR
1000+1.25 EUR
2000+1.2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGLR65R270D2XUMA1 IGLR65R270D2XUMA1 Hersteller : Infineon Technologies IGLR65R270D2XUMA1.pdf Description: GANFET N-CH 650V 7.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH