| Anzahl | Preis |
|---|---|
| 1+ | 3.59 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.21 EUR |
| 5000+ | 1.02 EUR |
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Technische Details IGLR65R270D2XUMA1 Infineon Technologies
Description: GANFET N-CH 650V 7.2A 8TDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 560µA, Supplier Device Package: PG-TSON-8-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V.
Weitere Produktangebote IGLR65R270D2XUMA1 nach Preis ab 1.19 EUR bis 3.73 EUR
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IGLR65R270D2XUMA1 | Hersteller : Infineon Technologies |
 Description: GANFET N-CH 650V 7.2A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 560µA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V |
auf Bestellung 4354 Stücke: Lieferzeit 10-14 Tag (e) |
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IGLR65R270D2XUMA1 | Hersteller : INFINEON |
Description: INFINEON - IGLR65R270D2XUMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 7.2 A, 0.33 ohm, 1 nC, TSON, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 7.2A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 1nC Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.33ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3686 Stücke: Lieferzeit 14-21 Tag (e) |
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IGLR65R270D2XUMA1 | Hersteller : Infineon Technologies |
Description: GANFET N-CH 650V 7.2A 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 560µA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V |
Produkt ist nicht verfügbar |