
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.59 EUR |
10+ | 2.31 EUR |
100+ | 1.57 EUR |
500+ | 1.3 EUR |
1000+ | 1.21 EUR |
5000+ | 1.02 EUR |
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Technische Details IGLR65R270D2XUMA1 Infineon Technologies
Description: IGLR65R270D2XUMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 560µA, Supplier Device Package: PG-TSON-8-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V.
Weitere Produktangebote IGLR65R270D2XUMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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IGLR65R270D2XUMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 560µA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V |
Produkt ist nicht verfügbar |
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IGLR65R270D2XUMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 560µA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V |
Produkt ist nicht verfügbar |