auf Bestellung 1211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.86 EUR |
| 10+ | 12.02 EUR |
| 100+ | 10.03 EUR |
| 500+ | 8.94 EUR |
| 1000+ | 7.96 EUR |
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Technische Details IGLT65R035D2ATMA1 Infineon Technologies
Description: IGLT65R035D2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 4.2mA, Supplier Device Package: PG-HDSOP-16-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V.
Weitere Produktangebote IGLT65R035D2ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IGLT65R035D2ATMA1 | Hersteller : INFINEON |
 Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, OberflächenmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 7.7nC Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.042ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1278 Stücke: Lieferzeit 14-21 Tag (e) |
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IGLT65R035D2ATMA1 | Hersteller : Infineon Technologies |
Description: IGLT65R035D2ATMA1 Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
Produkt ist nicht verfügbar |
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IGLT65R035D2ATMA1 | Hersteller : Infineon Technologies |
Description: IGLT65R035D2ATMA1 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
Produkt ist nicht verfügbar |