IGLT65R035D2ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 47A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
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Technische Details IGLT65R035D2ATMA1 Infineon Technologies
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 47A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Ladung, typ.: 7.7nC, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: HDSOP, Anzahl der Pins: 16Pin(s), Produktpalette: CoolGaN G5 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Drain-Source-Durchgangswiderstand: 0.042ohm.
Weitere Produktangebote IGLT65R035D2ATMA1 nach Preis ab 7.18 EUR bis 23.04 EUR
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IGLT65R035D2ATMA1 | Infineon Technologies |
Trans MOSFET N-CH GaN 650V 48A 16-Pin HDSOP EP T/R |
auf Bestellung 761 Stücke: Lieferzeit 14-21 Tag (e) |
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IGLT65R035D2ATMA1 | Infineon Technologies |
Trans MOSFET N-CH GaN 650V 48A 16-Pin HDSOP EP T/R |
auf Bestellung 761 Stücke: Lieferzeit 14-21 Tag (e) |
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IGLT65R035D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 47A 16SOP Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 13A Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
auf Bestellung 3577 Stücke: Lieferzeit 10-14 Tag (e) |
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IGLT65R035D2ATMA1 | INFINEON |
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Ladung, typ.: 7.7nC SVHC: No SVHC (25-Jun-2025) Anzahl der Pins: 16Pin(s) productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.042ohm |
auf Bestellung 394 Stücke: Lieferzeit 14-21 Tag (e) |
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IGLT65R035D2ATMA1 | INFINEON |
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 7.7nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: CoolGaN G5 Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.042ohm |
auf Bestellung 394 Stücke: Lieferzeit 14-21 Tag (e) |
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| IGLT65R035D2ATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH GaN 650V 48A 16-Pin HDSOP EP T/R
Trans MOSFET N-CH GaN 650V 48A 16-Pin HDSOP EP T/R
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.82 EUR |
| 17+ | 10.32 EUR |
| 25+ | 8.81 EUR |
| 100+ | 8.27 EUR |
| 250+ | 8.13 EUR |
| 500+ | 7.98 EUR |
| IGLT65R035D2ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH GaN 650V 48A 16-Pin HDSOP EP T/R
Trans MOSFET N-CH GaN 650V 48A 16-Pin HDSOP EP T/R
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 12.82 EUR |
| 17+ | 10.09 EUR |
| 25+ | 8.48 EUR |
| 100+ | 7.83 EUR |
| 250+ | 7.5 EUR |
| 500+ | 7.18 EUR |
| IGLT65R035D2ATMA1 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 47A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Description: GANFET N-CH 650V 47A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
auf Bestellung 3577 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.78 EUR |
| 10+ | 14.3 EUR |
| 50+ | 11.53 EUR |
| 100+ | 10.94 EUR |
| 500+ | 10.32 EUR |
| IGLT65R035D2ATMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 7.7nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 16Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.042ohm
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 7.7nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 16Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.042ohm
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 23.04 EUR |
| 13+ | 18.12 EUR |
| 16+ | 13.68 EUR |
| 50+ | 12.1 EUR |
| 100+ | 10.5 EUR |
| 250+ | 10.28 EUR |
| IGLT65R035D2ATMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 7.7nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.042ohm
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 7.7nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.042ohm
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 23.04 EUR |
| 13+ | 18.12 EUR |
| 16+ | 13.68 EUR |
| 50+ | 12.1 EUR |
| 100+ | 10.5 EUR |
| 250+ | 10.28 EUR |