| Anzahl | Preis |
|---|---|
| 1+ | 15.14 EUR |
| 10+ | 11.48 EUR |
| 100+ | 9.57 EUR |
| 500+ | 8.52 EUR |
| 1000+ | 7.59 EUR |
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Technische Details IGLT65R035D2ATMA1 Infineon Technologies
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 47A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, euEccn: NLR, Gate-Ladung, typ.: 7.7nC, Bauform - Transistor: HDSOP, Anzahl der Pins: 16Pin(s), Produktpalette: CoolGaN G5 Series, productTraceability: Yes-Date/Lot Code, Drain-Source-Durchgangswiderstand: 0.042ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote IGLT65R035D2ATMA1 nach Preis ab 9.58 EUR bis 18.69 EUR
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IGLT65R035D2ATMA1 | Infineon Technologies |
 Description: GANFET N-CH 650V 47A 16SOPPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 13A Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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IGLT65R035D2ATMA1 | INFINEON |
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 7.7nC Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: CoolGaN G5 Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.042ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 811 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IGLT65R035D2ATMA1 |
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Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 47A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Description: GANFET N-CH 650V 47A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.69 EUR |
| 10+ | 12.87 EUR |
| 100+ | 9.58 EUR |
| IGLT65R035D2ATMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 7.7nC
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.042ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IGLT65R035D2ATMA1 - Galliumnitrid (GaN)-Transistor, 650 V, 47 A, 0.042 ohm, 7.7 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 7.7nC
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.042ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)