IGLT65R055B2AUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
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Technische Details IGLT65R055B2AUMA1 Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 9A, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 3mA, Supplier Device Package: PG-HDSOP-16-9, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V.
Weitere Produktangebote IGLT65R055B2AUMA1 nach Preis ab 8.31 EUR bis 20.93 EUR
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IGLT65R055B2AUMA1 | Infineon Technologies |
GaN FETs CoolGaN Bi -directional switch, enhancement -mode |
auf Bestellung 2348 Stücke: Lieferzeit 10-14 Tag (e) |
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IGLT65R055B2AUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 21.8A 16SOP Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 9A Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 3mA Supplier Device Package: PG-HDSOP-16-9 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V |
auf Bestellung 2845 Stücke: Lieferzeit 10-14 Tag (e) |
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IGLT65R055B2AUMA1 | INFINEON |
Description: INFINEON - IGLT65R055B2AUMA1 - Galliumnitrid (GaN)-Transistor, 5.4 nC, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: - rohsCompliant: YES Dauer-Drainstrom Id: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.4nC Bauform - Transistor: HDSOP Anzahl der Pins: 16Pin(s) Produktpalette: CoolGaN G5 Series productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: - SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IGLT65R055B2AUMA1 | INFINEON |
Description: INFINEON - IGLT65R055B2AUMA1 - Galliumnitrid (GaN)-Transistor, 5.4 nC, HDSOP, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IGLT65R055B2AUMA1 |
|
Hersteller: Infineon Technologies
GaN FETs CoolGaN Bi -directional switch, enhancement -mode
GaN FETs CoolGaN Bi -directional switch, enhancement -mode
auf Bestellung 2348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.99 EUR |
| 10+ | 12.46 EUR |
| 100+ | 9.79 EUR |
| 1000+ | 8.31 EUR |
| IGLT65R055B2AUMA1 |
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Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
auf Bestellung 2845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.93 EUR |
| 10+ | 14.48 EUR |
| 100+ | 10.85 EUR |
| 500+ | 9.8 EUR |
| IGLT65R055B2AUMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGLT65R055B2AUMA1 - Galliumnitrid (GaN)-Transistor, 5.4 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: -
rohsCompliant: YES
Dauer-Drainstrom Id: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5.4nC
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: -
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IGLT65R055B2AUMA1 - Galliumnitrid (GaN)-Transistor, 5.4 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: -
rohsCompliant: YES
Dauer-Drainstrom Id: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 5.4nC
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: CoolGaN G5 Series
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: -
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
| IGLT65R055B2AUMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IGLT65R055B2AUMA1 - Galliumnitrid (GaN)-Transistor, 5.4 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: INFINEON - IGLT65R055B2AUMA1 - Galliumnitrid (GaN)-Transistor, 5.4 nC, HDSOP, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)