IGLT65R055B2AUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: GANFET N-CH 650V 21.8A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
auf Bestellung 1456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.81 EUR |
| 10+ | 11.64 EUR |
| 100+ | 9.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGLT65R055B2AUMA1 Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 9A, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 3mA, Supplier Device Package: PG-HDSOP-16-9, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V.
Weitere Produktangebote IGLT65R055B2AUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
IGLT65R055B2AUMA1 | Hersteller : Infineon Technologies |
Description: GANFET N-CH 650V 21.8A 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 9A Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 3mA Supplier Device Package: PG-HDSOP-16-9 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V |
Produkt ist nicht verfügbar |
|
 |
IGLT65R055B2AUMA1 | Hersteller : Infineon Technologies |
CoolGaN Bi -directional switch, enhancement -mode |
Produkt ist nicht verfügbar |