IGLT65R055B2AUMA1 Infineon Technologies

Description: HV GAN DISCRETES, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc), Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 3mA, Supplier Device Package: PG-HDSOP-16-9, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V.