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IGLT65R055D2ATMA1

IGLT65R055D2ATMA1 Infineon Technologies

Infineon_IGLT65R055D2_DataSheet_v01_00_EN.pdf Hersteller: Infineon Technologies
GaN FETs HV GAN DISCRETES
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.59 EUR
10+7.34 EUR
100+5.93 EUR
500+5.28 EUR
1000+4.52 EUR
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Technische Details IGLT65R055D2ATMA1 Infineon Technologies

Description: IGLT65R055D2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Power Dissipation (Max): 102W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-HDSOP-16-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V.

Weitere Produktangebote IGLT65R055D2ATMA1 nach Preis ab 5.55 EUR bis 10.03 EUR

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IGLT65R055D2ATMA1 IGLT65R055D2ATMA1 Hersteller : Infineon Technologies IGLT65R055D2ATMA1.pdf Description: IGLT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.03 EUR
10+6.76 EUR
100+5.55 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGLT65R055D2ATMA1 IGLT65R055D2ATMA1 Hersteller : Infineon Technologies IGLT65R055D2ATMA1.pdf Description: IGLT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH