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IGLT65R110D2ATMA1

IGLT65R110D2ATMA1 Infineon Technologies

Infineon_IGLT65R110D2_DataSheet_v01_00_EN.pdf
Hersteller: Infineon Technologies
GaN FETs HV GAN DISCRETES
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Lieferzeit 10-14 Tag (e)
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10+4.44 EUR
100+3.41 EUR
500+3.03 EUR
1000+2.6 EUR
1800+2.5 EUR
3600+2.43 EUR
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Technische Details IGLT65R110D2ATMA1 Infineon Technologies

Description: GANFET N-CH 650V 15A 16SOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 4A, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1.3mA, Supplier Device Package: PG-HDSOP-16-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V.

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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1 Hersteller : Infineon Technologies infineon-iglt65r110d2-datasheet-en.pdf Description: GANFET N-CH 650V 15A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
auf Bestellung 1256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.06 EUR
10+4.66 EUR
100+3.3 EUR
500+2.83 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGLT65R110D2ATMA1 IGLT65R110D2ATMA1 Hersteller : Infineon Technologies infineon-iglt65r110d2-datasheet-en.pdf Description: GANFET N-CH 650V 15A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH