auf Bestellung 1237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.65 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.41 EUR |
| 500+ | 3.03 EUR |
| 1000+ | 2.6 EUR |
| 1800+ | 2.5 EUR |
| 3600+ | 2.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGLT65R110D2ATMA1 Infineon Technologies
Description: IGLT65R110D2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1.3mA, Supplier Device Package: PG-HDSOP-16-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V.
Weitere Produktangebote IGLT65R110D2ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
IGLT65R110D2ATMA1 | Hersteller : Infineon Technologies |
Description: IGLT65R110D2ATMA1Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V |
Produkt ist nicht verfügbar |
|
|
IGLT65R110D2ATMA1 | Hersteller : Infineon Technologies |
Description: IGLT65R110D2ATMA1Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V |
Produkt ist nicht verfügbar |

