IGOT60R070D1AUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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Technische Details IGOT60R070D1AUMA1 Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO, Packaging: Tape & Reel (TR), Package / Case: 20-PowerSOIC (0.433", 11.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-DSO-20-87, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V.
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|---|---|---|---|---|---|
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IGOT60R070D1AUMA1 | Infineon Technologies |
MOSFET GAN HV |
auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IGOT60R070D1AUMA1 |
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Hersteller: Infineon Technologies
MOSFET GAN HV
MOSFET GAN HV
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)